• DocumentCode
    3109567
  • Title

    Bandpass delta-sigma modulator with 800 MHz center frequency

  • Author

    Jayaraman, A. ; Asbeck, P. ; Nary, K. ; Beccue, S. ; Keh-Chung Wang

  • Author_Institution
    California Univ., San Diego, La Jolla, CA, USA
  • fYear
    1997
  • fDate
    12-15 Oct. 1997
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    A fourth-order bandpass /spl Delta/-/spl Sigma/ modulator with center frequency of 800 MHz designed and fabricated in AlGaAs/GaAs heterojunction bipolar transistor (HBT) technology is reported. The modulator can be clocked at a continuum of frequencies from 2-4 GHz. Its performance was characterized at one convenient clock frequency, 3.2 GHz, since clocking the modulator at 4 times the center frequency allows for trivial extraction of in-phase and quadrature components of the bandpass signal in the digital domain. The 1-bit modulator output achieves a signal-to-noise ratio of 66 dB over a 100 kHz bandwidth and 41 dB over a 25 MHz bandwidth (which covers the entire cellular band).
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; sigma-delta modulation; 1 bit; 100 kHz; 25 MHz; 3.2 GHz; 800 MHz; AlGaAs-GaAs; AlGaAs/GaAs HBT technology; bandwidth; cellular band; clock frequency; fourth-order bandpass delta-sigma modulator; signal-to-noise ratio; Bandwidth; Circuits; Clocks; Delta modulation; Digital modulation; Feedback; Frequency modulation; Heterojunction bipolar transistors; Signal to noise ratio; Transconductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
  • Conference_Location
    Anaheim, CA, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-4083-3
  • Type

    conf

  • DOI
    10.1109/GAAS.1997.628246
  • Filename
    628246