Title :
A 10 Gb/s 12x12 cross-point switch implemented with AlGaAs/GaAs heterojunction bipolar transistors
Author :
Metzger, A. ; Chang, C.E. ; Asbeck, P.M. ; Wang, K.C. ; Pedrotti, K. ; Price, A. ; Campana, A. ; Wu, D. ; Liu, J. ; Beccue, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
A 12x12 cross-point switch is reported which operates with data rate per channel of 10 Gb/s. The aggregate data rate for the switch, 120 Gb/s, is one of the highest of any reported IC. The circuit is based on AlGaAs/GaAs HBT technology and employs a double switching architecture to minimize jitter. An rms jitter below 4 psec has been demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; electronic switching systems; gallium arsenide; heterojunction bipolar transistors; jitter; 10 Gbit/s; AlGaAs-GaAs; AlGaAs/GaAs HBT IC; cross-point switch; double switching architecture; heterojunction bipolar transistor; jitter; Clocks; Communication switching; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Jitter; Optical fiber communication; Optical switches; Switching circuits; Telecommunication traffic;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628249
