Title :
Resonant tunneling circuit technology: has it arrived?
Author :
Seabaugh, A. ; Brar, B. ; Broekaert, T. ; Frazier, G. ; Morris, F. ; van der Wagt, P. ; Beam, E.
Author_Institution :
Raytheon TI Syst., Dallas, TX, USA
Abstract :
A three-dimensional large-scale integration (LSI) process for fabrication of resonant tunneling diodes and heterojunction field-effect transistors on InP has been demonstrated, combining two of today´s fastest semiconductor devices. Demonstrations of this technology now include multigigahertz digital and mixed-signal circuits and ultralow power SRAM circuits; 25 to 100 GHz circuits are clearly in range for this technology.
Keywords :
indium compounds; 25 to 100 GHz; InP; fabrication; heterojunction field-effect transistor; high-speed digital circuit; mixed-signal circuit; resonant tunneling circuit technology; resonant tunneling diode; semiconductor device; three-dimensional LSI process; ultralow power SRAM circuit; FETs; Fabrication; Heterojunctions; Indium phosphide; Large scale integration; RLC circuits; Random access memory; Resonant tunneling devices; Semiconductor devices; Semiconductor diodes;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628251
