Title :
Super-small and low-power front-end HIC using MBB technology for 1.9 GHz bands
Author :
Nakatsuka, T. ; Itoh, J. ; Yoshida, T. ; Nishitsuji, M. ; Uda, T. ; Ishikawa, O.
Author_Institution :
Electron. Res. Lab., Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
Super-small and low-power receiver front-end hybrid IC(HIC) using Micro Bump Bonding (MBB) technology for 1.9 GHz bands has been newly developed. By using the MBB, the HIC was miniaturized to 3.5/spl times/4.0/spl times/1.0 mm, which is more than 60% of reduction as compared with the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, image rejection ratio over 20 dBc were obtained for the HIC at 1.9 GHz, 3.0 V and 4.5 mA of power supply.
Keywords :
UHF integrated circuits; hybrid integrated circuits; integrated circuit interconnections; microassembling; radio receivers; 1.9 GHz; 16 dB; 3 V; 4.5 mA; Au; MBB technology; UHF IC; hybrid IC; low-power front-end HIC; micro bump bonding technology; receiver front-end; Bonding; Capacitors; Ceramics; Circuits; Electrodes; Gallium arsenide; Radio frequency; Substrates; Thermal stresses; Thin film inductors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628254
