Title :
Towards high-performance > 100 GHz SiGe and CMOS circuits
Author :
Rebeiz, Gabriel M. ; May, Jason ; Uzunkol, Mehmet ; Shin, Woorim ; Inac, Ozgur ; Chang, Mingchao
Author_Institution :
Univ. of California, La Jolla, CA, USA
Abstract :
This paper presents SiGe and CMOS circuits with > 100 GHz operation. The goal is to show that SiGe can be used for imaging systems due to its low 1/f noise properties. A W-band SiGe imaging chip is presented with performance which is nearly as good as the best InP chips. Another goal is to show that deep-scaled CMOS can result in high performance amplifiers, detectors, and doublers at 90-110 GHz and at 180-220 GHz. The applications areas are in high data-rate communications, > 100 GHz automotive radars (140 and 220 GHz) and mm-wave imaging systems.
Keywords :
1/f noise; CMOS integrated circuits; Ge-Si alloys; MIMIC; millimetre wave imaging; semiconductor materials; 1/f noise; InP chips; SiGe; W-band SiGe imaging chip; automotive radars; deep-scaled CMOS circuits; detectors; doublers; frequency 180 GHz to 220 GHz; frequency 90 GHz to 110 GHz; high data-rate communications; high performance amplifiers; mm-wave imaging systems; Automotive engineering; Broadband amplifiers; Circuits; Detectors; Germanium silicon alloys; Interference; Radar applications; Radar imaging; Silicon germanium; Wideband; CMOS; D-band; SiGe; W-band; communications; imaging;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5515917
