AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise

Author

Bayraktaroglu, B. ; Dix, G. ; Mohammadi, Soheil ; Pavlidis, Dimitris

Author_Institution

Northrop Grumman Corp., Baltimore, MD, USA

fYear

1997

fDate

12-15 Oct. 1997

Firstpage

157

Lastpage

160

Abstract

The long-term reliability of an AlGaAs/GaAs HBT was found to have a strong dependence on the starting epitaxial material. The measured and extrapolated lifetimes ranged from 10/sup 2/ to 10/sup 9/ hours with devices fabricated on wafers obtained from 3 different vendors. The low frequency baseband noise characteristics were used to identify the source and the nature of mechanisms that lead to current gain degradation.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; life testing; semiconductor device noise; semiconductor device reliability; 1E2 to 1E9 hr; AlGaAs-GaAs; HBT reliability; LF baseband noise characteristics; current gain degradation; lifetime; long-term reliability; low frequency baseband noise; material dependence; starting epitaxial material; Baseband; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Materials reliability; Noise measurement; Stress; Temperature; Testing; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual

Conference_Location

Anaheim, CA, USA

ISSN

1064-7775

Print_ISBN

0-7803-4083-3

Type

conf

DOI

10.1109/GAAS.1997.628259

Filename

628259