Title :
Sacrificial oxide etching compatible with aluminum metallization
Author :
Gennissen, P.T.J. ; French, P.J.
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Abstract :
This paper reports on sacrificial oxide etching with very high selectivity to aluminum metallization using mixtures of 73% HF and IPA. Etch rate ratios up to 680 have been achieved even for (slow etching) thermal oxide. Thermal oxide etch rates up to 1.8 μm/min. are reported. Thick polysilicon accelerometers with aluminum metallization and thermal sacrificial oxide have been made as well as full aluminum microstructures using plasma oxide as sacrificial layer
Keywords :
accelerometers; aluminium; elemental semiconductors; etching; integrated circuit metallisation; micromachining; microsensors; semiconductor device metallisation; silicon; Al; Al metallization compatibility; Al microstructures; Al-SiO2-Si; HF; HF-IPA mixtures; etch rate ratio; etch selectivity; plasma oxide sacrificial layer; sacrificial oxide etching; slow etching; surface micromachining; thermal oxide; thick polysilicon accelerometers; Accelerometers; Aluminum; Dry etching; Hafnium; Instruments; Laboratories; Metallization; Protection; Resists; Surface tension;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.613624
