Title :
Growth of large platy InGaAs crystals and fabrication of semiconductor laser diodes
Author :
Kinoshita, Keizo ; Yoda, S. ; Arai, Manabu ; Kawaguchi, Yuki ; Kondo, Yuta ; Kano, F. ; Aoki, Hidetaka ; Hosokawa, T. ; Yamamoto, Seiichi
Author_Institution :
Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Tsukuba, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
We have succeeded in increasing size of InxGa1-xAs (x: 0.1-0.13) platy single crystals to 30 ×30 mm2 in surface area for mass production of laser diodes. Key points are to suppress convection in a melt and to keep constant temperature gradient for obtaining homogeneous crystals. Grown crystals have enough quality as substrates for 1.3 μm laser diodes. Fabricated laser diodes on these substrates were evaluated by measuring lasing characteristics at various temperatures and by measuring bit error rate for transmission through a single mode fiber up to 20 km. Lasers showed high temperature stability and error free transmission and showed the merit of ternary substrates.
Keywords :
III-V semiconductors; crystal growth from melt; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; InxGa1-xAs; high-temperature stability; homogeneous crystals; lasing characteristics; semiconductor laser diodes; ternary substrates; Bit error rate; Crystals; Diode lasers; Indium gallium arsenide; Laser stability; Mass production; Optical device fabrication; Substrates; Surface emitting lasers; Temperature measurement; a new growth method; bulk crystal growth; laser fabrication; substrates for 1.3 μm laser diodes; ternary;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5515938
