Title :
Sub-1.3 dB noise figure direct-coupled MMIC LNAs using a high current-gain 1-/spl mu/m GaAs HBT technology
Author :
Kobayashi, K.W. ; Tran, L.T. ; Lammert, M.D. ; Block, T.R. ; Grossman, P.C. ; Oki, A.K. ; Streit, D.C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
Here we report on direct-coupled HBT MMIC LNAs which achieve sub-1.3 dB noise figures up to 2 GHz. This is believed to be the lowest noise figure (NF) reported for a 50/spl Omega/ MMIC-matched LNA in this frequency range. The LNAs are based on a new 1-/spl mu/m GaAs HBT technology which provides high DC current gains of >400 and f/sub T/´s in excess of 40 GHz and enables low broadband amplifier noise figure performance. A DC-3.2 GHz HBT LNA (DCLNA2) design achieves a gain of 24.6 dB and sub-1.3 dB NF up to 2 GHz while consuming only 7.8 mA of current. The minimum LNA noise figure is 1.22 dB at 1.5 GHz. A DC-6 GHz design (DCLNA1) achieves 26.1 dB gain and a NF less than 2 dB up to 4 GHz while consuming 16.4 mA. The NF at 6 GHz is 2.52 dB with a corresponding IP3 of 11 dBm. These HBT MMICs provide a low cost LNA solution for receiver applications encompassing the industrial-scientific-medical (ISM) wireless bands.
Keywords :
DC amplifiers; III-V semiconductors; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; bipolar MMIC; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit noise; wideband amplifiers; 0 to 6 GHz; 1 micron; 1.22 to 2.52 dB; 24.6 to 26.1 dB; 7.8 to 16.4 mA; GaAs; GaAs HBT technology; ISM wireless bands; UHF receiver applications; broadband amplifier; direct-coupled MMIC LNA; high current-gain type; noise figure; Costs; Dielectric thin films; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; MMICs; Noise figure; Noise measurement; Space technology;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-4083-3
DOI :
10.1109/GAAS.1997.628278