35-GHz monolithic GaAs FET power amplifiers

Author

Ho, T. ; Phelleps, F. ; Hegazi, G. ; Pande, K. ; Huang, H. ; Rice, P. ; Pages, P.

Author_Institution

Comsat Lab., Clarksburg, MD, USA

fYear

1990

fDate

30 Sep-3 Oct 1990

Firstpage

483

Abstract

A state-of-the-art 35-GHz monolithic GaAs power amplifier, based on metal semiconductor field-effect transistor (MESFET) technology, is developed for millimeter-wave communications and seeker applications. Both single-ended and balanced amplifier configurations, with on-chip DC-block and bias networks, are designed and evaluated. A cascaded four-stage amplifier exhibited 14.6 dB of linear gain and 300 mW of saturated output power at 35 GHz. These MMIC chips are very flexible and can easily be combined/cascaded to achieve even higher gains and greater output power using low-loss off-chip power combiner/dividers. These amplifiers are suitable for future military millimeter-wave systems applications

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; 35 GHz; EHF; GaAs; MESFET technology; MMIC chips; balanced amplifier configurations; cascaded four-stage amplifier; linear gain; millimeter-wave communications; monolithic GaAs FET power amplifiers; saturated output power; single-ended configurations; FETs; Field effect MMICs; Gain; Gallium arsenide; MESFETs; Millimeter wave communication; Network-on-a-chip; Power amplifiers; Power generation; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Military Communications Conference, 1990. MILCOM '90, Conference Record, A New Era. 1990 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/MILCOM.1990.117465

Filename

117465