Title :
Selfconsistent model for pseudomorphic MOSFETs
Author :
Carroll, Roger ; Anwar, A.M.
Author_Institution :
United Technol. Res. Center, East Hartford, CT, USA
fDate :
30 Sep-3 Oct 1990
Abstract :
A self-consistent charge control and current-voltage (I V) characteristics are presented for a pseudomorphic MODFET (AlGaAs/InGaAs/AlGaAs). Poisson´s and Schrodinger´s equations are solved self-consistently to calculate the areal charge distribution n s in the quantum well (QW). For simplicity, the QW formed in InGaAs is approximated by three straight lines. The gate voltage dependence of the two-dimensional electron gas gives the charged control expression
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor quantum wells; solid-state microwave devices; AlGaAs; AlGaAs/InGaAs/AlGaAs; InGaAs; Poisson equation; Schrodinger equation; areal charge distribution; charged control; current-voltage characteristics; pseudomorphic MODFET; quantum well; self-consistent model; two-dimensional electron gas; Effective mass; Electrons; Gallium arsenide; Indium gallium arsenide; MODFETs; MOSFETs; Potential energy; Predictive models; Schrodinger equation; Shape;
Conference_Titel :
Military Communications Conference, 1990. MILCOM '90, Conference Record, A New Era. 1990 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/MILCOM.1990.117466
