Title :
Integration of nanophotonic devices for on-chip optical interconnects
Author :
Assefa, Solomon ; Xia, Fengnian ; Bedell, S.W. ; Zhang, Ying ; Topuria, Teya ; Rice, Philip M. ; Vlasov, Yurii A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Compact germanium waveguide photodetector with 40 Gbps bandwidth and 0.4 A/W responsivity is demonstrated. High-quality Ge-on-insulator single-crystalline layer was monolithically integrated into front-end CMOS process by lateral seeded crystallization.
Keywords :
CMOS integrated circuits; germanium; integrated optics; nanophotonics; optical interconnections; optical waveguides; photodetectors; Ge; bit rate 40 Gbit/s; front end CMOS process; germanium-on-insulator single-crystalline layer; lateral seeded crystallization; nanophotonic device integration; on chip optical interconnects; waveguide photodetector; Bandwidth; CMOS process; Crystallization; Germanium; Nanoscale devices; Optical interconnections; Optical materials; Optical waveguides; Photodetectors; Silicon;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5214256
