DocumentCode :
3110747
Title :
Active simultaneous harmonic source and load pull assisted by local polyharmonic distortion models
Author :
Leoni, Robert E., III ; Harris, Scott A. ; Ries, David G.
Author_Institution :
Integrated Defense Syst., Raytheon Co., Andover, MA, USA
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1166
Lastpage :
1169
Abstract :
The efficiency of a power amplifier is a strong function of the core transistor technology and the circuitry that is wrapped around it. There are many theoretical approaches to obtaining full DC-to-RF conversion from an ideal transistor, however real-world technologies do not perform equally well with each. The parasitic reactances and non-ideal DC characteristics of a transistor technology result in matching and bias requirements that can deviate significantly from those of ideal theory. In this paper we describe the use of an active simultaneous source and load pull system that quickly ascertains the conditions required to achieve a transistor technology´s peak efficiency performance. The speed with which the system is able to achieve these results is facilitated by local polyharmonic distortion models that provide a quick and reliable method for finding the path of steepest ascent.
Keywords :
harmonic distortion; power amplifiers; power transistors; DC-to-RF conversion; active simultaneous harmonic source; core transistor technology; load pull; nonideal DC characteristic; parasitic reactance; polyharmonic distortion model; power amplifier; Distortion measurement; Harmonic distortion; Impedance; Particle measurements; Phase measurement; Power amplifiers; Power measurement; Power system harmonics; Power system modeling; Voltage; Behavioral modeling; high efficiency power amplifiers; large-signal measurement; nonlinear systems; polyharmonic distortion models; transistor characterization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5515961
Filename :
5515961
Link To Document :
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