• DocumentCode
    3110767
  • Title

    Sensitivity of a 20-GS/s InP DHBT latched comparator

  • Author

    Kraus, S. ; Makon, R.E. ; Kallfass, I. ; Driad, R. ; Moyal, M. ; Ritter, D.

  • Author_Institution
    Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
  • fYear
    2010
  • fDate
    May 31 2010-June 4 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present simulations and measurements of the sensitivity of a master-slave emitter-coupled logic (ECL) latched comparator implemented in an InP/GaInAs DHBT technology. The circuit exhibited simulated and experimental sensitivities of 11.5 mV and 17 mV, respectively, at a clock rate of 20 GHz, with no preamplifier.
  • Keywords
    comparators (circuits); gallium compounds; heterojunction bipolar transistors; indium compounds; DHBT latched comparator; InP-GaInAs; frequency 20 GHz; master-slave emitter-coupled logic latched comparator; voltage 11.5 mV; voltage 17 mV; Circuit simulation; Clocks; DH-HEMTs; Heterojunction bipolar transistors; Indium phosphide; Logic; Metastasis; Physics; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
  • Conference_Location
    Kagawa
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-5919-3
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2010.5515962
  • Filename
    5515962
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3110767