Title :
Advances in the growth and performance of antimonide-based mid-infrared interband cascade lasers
Author :
Bewley, W.W. ; Canedy, C.L. ; Kim, C.S. ; Kim, M. ; Lindle, J.R. ; Abell, J. ; Vurgaftman, I. ; Meyer, J.R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
May 31 2010-June 4 2010
Abstract :
We discuss the growth and state-of-the-art performance characteristics of mid-infrared interband cascade lasers. Broad-area devices with 5 active stages display pulsed threshold current densities as low as 400 A/cm2 at room temperature, owing to an unexpectedly strong suppression of Auger recombination. New designs also produce lasers with internal losses as low as ≈ 6 cm-1 at room temperature. We also study the performance of narrow ridges that dissipate heat efficiently for high-temperature cw operation. The degradations of the threshold current density and differential slope efficiency are modest until the ridge width is decreased to 3 μm. A 13-μm-wide uncoated ridge produces up to 45 mW of cw power at 293 K, and displays a maximum wall-plug efficiency of 3.5%. A 5-μm-wide 3-mm-long ridge without any facet coatings operates cw to 345 K, which is a new record high temperature for any semiconductor laser emitting in the 3.0-4.6 μm spectral range.
Keywords :
Auger effect; electron-hole recombination; quantum cascade lasers; semiconductor lasers; Auger recombination; facet coatings; mid-infrared interband cascade lasers; power 45 mW; semiconductor laser; size 13 mum; size 3 mm; size 5 mum; temperature 293 K to 298 K; temperature 345 K; Coatings; Degradation; Displays; Laser modes; Optical design; Quantum cascade lasers; Radiative recombination; Semiconductor lasers; Temperature distribution; Threshold current;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5515970