Negative dispersion in γ-Mo2N/Si(100) films

Author

Atuchin, Victor V. ; Khasanov, Tokhir ; Kochubey, Vasilii A. ; Pokrovsky, Lev D. ; Senchenko, Elena S.

Author_Institution

Lab. of Opt. Mater. & Struct., SB RAS, Novosibirsk, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

30

Lastpage

33

Abstract

Molybdenum nitride films γ-Mo₂N/Si have been fabricated with reactive magnetron sputtering of metal target in (N₂ + Ar) gas mixture. Phase composition of the films has been defined with RHEED. Refractive index and extinction coefficient of γ-Mo₂N thin films have been evaluated with laser ellipsometry at λ = 632.8 and 488.0 nm. Negative dispersion has been found for refractive index of γ-Mo₂N in visible spectral range. Upper limit of γ-Mo₂N film thickness measurable with laser ellipsometry has been estimated to be ~80 nm.

Keywords

ellipsometry; extinction coefficients; integrated optics; measurement by laser beam; molybdenum compounds; optical dispersion; optical fabrication; optical films; reflection high energy electron diffraction; refractive index; sputter deposition; thin films; visible spectra; Mo₂N; RHEED; Si; extinction coefficient; film thickness; gas mixture; laser ellipsometry; molybdenum nitride thin films; negative dispersion; phase composition; reactive magnetron sputtering; refractive index; visible spectra; wavelength 488.0 nm; wavelength 632.8 nm; Ellipsometry; Optical films; Optical variables control; Physics; Sputtering; Substrates; Molybdenum nitride; RHEED; extinction coefficient; laser ellipsometry; magnetron sputtering; refractive index;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006886

Filename

6006886