Title :
Negative dispersion in γ-Mo2N/Si(100) films
Author :
Atuchin, Victor V. ; Khasanov, Tokhir ; Kochubey, Vasilii A. ; Pokrovsky, Lev D. ; Senchenko, Elena S.
Author_Institution :
Lab. of Opt. Mater. & Struct., SB RAS, Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
Molybdenum nitride films γ-Mo2N/Si have been fabricated with reactive magnetron sputtering of metal target in (N2 + Ar) gas mixture. Phase composition of the films has been defined with RHEED. Refractive index and extinction coefficient of γ-Mo2N thin films have been evaluated with laser ellipsometry at λ = 632.8 and 488.0 nm. Negative dispersion has been found for refractive index of γ-Mo2N in visible spectral range. Upper limit of γ-Mo2N film thickness measurable with laser ellipsometry has been estimated to be ~80 nm.
Keywords :
ellipsometry; extinction coefficients; integrated optics; measurement by laser beam; molybdenum compounds; optical dispersion; optical fabrication; optical films; reflection high energy electron diffraction; refractive index; sputter deposition; thin films; visible spectra; Mo2N; RHEED; Si; extinction coefficient; film thickness; gas mixture; laser ellipsometry; molybdenum nitride thin films; negative dispersion; phase composition; reactive magnetron sputtering; refractive index; visible spectra; wavelength 488.0 nm; wavelength 632.8 nm; Ellipsometry; Optical films; Optical variables control; Physics; Sputtering; Substrates; Molybdenum nitride; RHEED; extinction coefficient; laser ellipsometry; magnetron sputtering; refractive index;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006886
