Title :
Formation of HfO2/GaAs(001) interface with Si interlayer
Author :
Golyashov, Vladimir A. ; Aksenov, Maxim S. ; Valisheva, Natalya A. ; Prosvirin, Igor P. ; Kalinkin, Alexandr V. ; Preobrazhensky, Valery V. ; Putyato, Mikhail A. ; Semyagin, Boris R. ; Tereshchenko, Oleg E.
Author_Institution :
Novosibirsk State Univ., Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
Composition and electrical characteristics of HfO2/Si/GaAs(001) interface formed by e-beam evaporation of Hf in NO2 ambient on MBE-grown Si/GaAs structure, were studied by XPS and C-V methods. The deposition of HfO2 on Si-passivated GaAs(001) surface leads to the formation of sharp HfO2/Si/GaAs interface without oxidation of Si interlayer. AFM studies of the HfO2/Si/GaAs(001) interface show that HfO2 deposition preserved the flatness of the surface, keeping the mean roughness on the terraces on a level of approximately 0.2-0.3 nm.
Keywords :
III-V semiconductors; X-ray photoelectron spectra; atomic force microscopy; elemental semiconductors; gallium arsenide; hafnium compounds; high-k dielectric thin films; molecular beam epitaxial growth; passivation; semiconductor growth; semiconductor-insulator boundaries; silicon; surface roughness; AFM; C-V method; GaAs; HfO2-Si-GaAs; MBE-grown structure; XPS; e-beam evaporation; interlayer; surface passivation; surface roughness; Gallium arsenide; Hafnium compounds; Silicon; Surface morphology; Surface roughness; Surface topography; Surface treatment; GaAs; high-k dielectric; surface passivation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006887
