Copper Germanium alloys formation by low temperature atomic hydrogen treatment

Author

Kazimirov, Artyom I. ; Erofeev, Evgeny V. ; Kagadei, Valery A.

Author_Institution

Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

41

Lastpage

44

Abstract

The behavior of the two-layer thin-film Cu/Ge system deposited on i-GaAs substrate at treatment in atomic hydrogen was investigated. It was found that such processing in an atomic hydrogen flow with density 10¹⁵ at. cm² s^-1 at room temperature for 5 min leads to the solid state interdiffusion of Cu and Ge thin films and poly-crystalline CuGe alloy formation with the vertically oriented grains.

Keywords

chemical interdiffusion; copper alloys; germanium alloys; liquid phase deposition; metallic thin films; CuGe; GaAs; copper germanium alloys; low temperature atomic hydrogen treatment; polycrystalline alloy; solid state interdiffusion; temperature 293 K to 298 K; time 5 min; two-layer thin-film system; vertically oriented grains; Annealing; Copper; Films; Gallium arsenide; Resistance; Surface treatment; Thin films; atomic hydrogen; copper germanium alloy; diffusion; sheet resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006889

Filename

6006889