• DocumentCode
    3111107
  • Title

    Features of surface and interface with dielectric for narrow-gap A3B5 semiconductors

  • Author

    Kuryshev, Georgy L.

  • Author_Institution
    Siberian Branch, A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia
  • fYear
    2011
  • fDate
    June 30 2011-July 4 2011
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    The possibility of InAs surface passivation by the ultrathin (5-15 nm) native oxide films is presented. The density of surface states, (from the peak low-signal conductivity) shows that the boundary between the oxide - InAs is characterized by a low density of surface states 3-5·1010 cm-2 eV-1.
  • Keywords
    III-V semiconductors; indium compounds; passivation; semiconductor thin films; surface states; InAs; narrow-gap semiconductors; surface passivation; surface states; ultrathin native oxide films; Chemicals; Films; Oxidation; Surface discharges; Surface morphology; Surface reconstruction; Surface treatment; Interface; anodic oxidation; surface states;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
  • Conference_Location
    Erlagol, Altai
  • Print_ISBN
    978-1-61284-793-1
  • Type

    conf

  • DOI
    10.1109/EDM.2011.6006894
  • Filename
    6006894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3111107