Title :
Reliability testing by precise electrical measurement
Author :
Dorey, A.P. ; Jones, B.K. ; Richardson, A.M. ; Russell, P.C. ; Xu, Y.Z.
Author_Institution :
Dept. of Phys. & Eng., Lancaster Univ., UK
Abstract :
Tests have been devised which provide indication of incipient failure of CMOS devices. The experimental methodology to confirm the value of the tests depends on the acceptance of the Arrenhius relationships as it was investigated using accelerated life test techniques. Tests have included leakage current, transient current, electrical noise, upper cutoff frequency and delay times. The devices under tests have been stressed to accelerate aging and the results of the diagnostic electrical measurements correlated with subsequent failure. Consideration has been given to the implementation of the reliability tests in conjunction with the normal functional testing
Keywords :
CMOS integrated circuits; delays; electric noise measurement; integrated circuit testing; leakage currents; life testing; reliability; transients; Arrenhius relationships; CMOS devices; IC testing; accelerated life test; aging; delay times; electrical measurement; electrical noise; leakage current; reliability tests; transient current; upper cutoff frequency; Circuit testing; Electric variables measurement; Integrated circuit interconnections; Integrated circuit measurements; Integrated circuit reliability; Leakage current; Reliability engineering; Semiconductor device measurement; Semiconductor device noise; Semiconductor devices;
Conference_Titel :
Test Conference, 1988. Proceedings. New Frontiers in Testing, International
Conference_Location :
Washington, DC
Print_ISBN :
0-8186-0870-6
DOI :
10.1109/TEST.1988.207823
