Title :
Stability of (0001) Bi2Te3 surface
Author :
Makarenko, Sergey V. ; Atuchin, Viktor V. ; Kokh, Konstantin A. ; Golyashov, Vladimir A. ; Kozhukhov, Anton S. ; Prosvirin, Igor P. ; Tereshchenko, Oleg E.
Author_Institution :
Novosibirsk State Univ., Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
The surface stability of single crystals Bi2Se3 and Bi2Te3 has been studied by XPS, AFM, STM and RHEED techniques. The Bi2Se3 and Bi2Te3 single crystals were grown by vertical Bridgman method. Crystal cleaving induced atomically flat surfaces over 1 cm2 area. XPS revealed that cleaved Bi2Se3 and Bi2Te3 surface were stable to oxidation over two months. The surfaces are sufficiently inert to obtain STM atomic resolution even in two weeks after cleaved.
Keywords :
X-ray photoelectron spectra; atomic force microscopy; bismuth compounds; crystal growth from melt; narrow band gap semiconductors; oxidation; reflection high energy electron diffraction; scanning tunnelling microscopy; semiconductor growth; AFM; Bi2Se3; Bi2Te3; RHEED techniques; STM atomic resolution; XPS; crystal cleaving; oxidation; single crystal surface stability; vertical Bridgman method; Atomic force microscopy; Bismuth; Chemicals; Crystals; Insulators; Scanning electron microscopy; Bi2Se3; Bi2Te3; Oxide; surface; topological insulator;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006896
