Stability of (0001) Bi2Te3 surface

Author

Makarenko, Sergey V. ; Atuchin, Viktor V. ; Kokh, Konstantin A. ; Golyashov, Vladimir A. ; Kozhukhov, Anton S. ; Prosvirin, Igor P. ; Tereshchenko, Oleg E.

Author_Institution

Novosibirsk State Univ., Novosibirsk, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

66

Lastpage

67

Abstract

The surface stability of single crystals Bi₂Se₃ and Bi₂Te₃ has been studied by XPS, AFM, STM and RHEED techniques. The Bi₂Se₃ and Bi₂Te₃ single crystals were grown by vertical Bridgman method. Crystal cleaving induced atomically flat surfaces over 1 cm² area. XPS revealed that cleaved Bi₂Se₃ and Bi₂Te₃ surface were stable to oxidation over two months. The surfaces are sufficiently inert to obtain STM atomic resolution even in two weeks after cleaved.

Keywords

X-ray photoelectron spectra; atomic force microscopy; bismuth compounds; crystal growth from melt; narrow band gap semiconductors; oxidation; reflection high energy electron diffraction; scanning tunnelling microscopy; semiconductor growth; AFM; Bi₂Se₃; Bi₂Te₃; RHEED techniques; STM atomic resolution; XPS; crystal cleaving; oxidation; single crystal surface stability; vertical Bridgman method; Atomic force microscopy; Bismuth; Chemicals; Crystals; Insulators; Scanning electron microscopy; Bi2Se3; Bi2Te3; Oxide; surface; topological insulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006896

Filename

6006896