Title :
Investigation of SiOx layer annealing process using Monte Carlo simulation
Author :
Mikhantiev, Eugene A. ; Karpov, Alexander N. ; Usenkov, Stanislav V. ; Shwartz, Natalia L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 30 2011-July 4 2011
Abstract :
Simulation of silicon nanocluster formation in SiOx and SiO2-SiO-SiO2 layers after high temperature annealing was carried out. Cluster size distribution depending on temperature and annealing time was obtained. The process of Si 3D island formation during silicon deposition on silicon dioxide substrate was examined. Simulation demonstrated the role of SiO molecule in Si-nc aggregation.
Keywords :
Monte Carlo methods; annealing; silicon compounds; 3D island formation; Monte Carlo simulation; SiO2-SiO-SiO2; SiOx; high temperature annealing; layer annealing process; silicon deposition; silicon dioxide substrate; silicon nanocluster formation; Annealing; Films; Lattices; Monte Carlo methods; Silicon; Silicon compounds; Substrates; Monte Carlo simulation; Si; SiOx; nanoclusters;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-61284-793-1
DOI :
10.1109/EDM.2011.6006897
