Title :
Analysis of memory property on the memristor based on the current and constant of integration
Author :
Gang Bao ; Shen, Yi ; Zeng, Zhigang
Author_Institution :
Dept. of Control Sci. & Eng., Huazhong Univ. of Sci. & & Technol., Wuhan, China
Abstract :
Memristor has received significant attentions since Strukov et al released their invention on April 30, 2008 at Nature Letters. Based on the model of Strukov et al, analytic expression of the internal state is obtained by applying voltage to the device. By using the constant in the expression of the internal state, memory property of the memristor is explained.
Keywords :
memristors; internal state; memory property; memristors;
Conference_Titel :
Information Science and Technology (ICIST), 2011 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-9440-8
DOI :
10.1109/ICIST.2011.5765174
