Bolometer at semiconductor-metal phase transition in VO2 thin films

Author

Aliev, Vladimir Sh ; Bortnikov, Sergey G.

Author_Institution

A.V. Rzhanov Inst. of Semicond. Phys., SB RAS, Novosibirsk, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

129

Lastpage

131

Abstract

A double ion beam sputtering deposition method was used for fabricating bolometric structure based on poly-crystalline VO₂ film. A sensitivity of bolometric structure to infrared (IR) radiation at semiconductor-metal phase transition (SMPT) was observed. It has been established that temperature coefficient of resistance (TCR) in phase transition region is 10 times higher of such value at room temperature and resistance of bolometric structure is 25 times lower.

Keywords

bolometers; phase transformations; radiation effects; semiconductor device manufacture; semiconductor thin films; vanadium compounds; bolometer; double ion beam sputtering deposition method; infrared radiation; phase transition region; polycrystalline VO2 film; semiconductor metal phase transition; temperature 293 K to 298 K; temperature coefficient of resistance; Bolometers; Films; Heating; Hysteresis; Resistance; Temperature measurement; Temperature sensors; VO2 thin films; bolometer; infrared radiation; phase transition semiconductor-metal;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006913

Filename

6006913