Dynamic current localization in power bipolar switches with imperfect interconnections of controlled cells

Author

Gusin, Dmitriy V. ; Gorbatyuk, Andrew V. ; Grekhov, Igor V.

Author_Institution

St. Petersburg State Polytech. Univ., St. Petersburg, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

132

Lastpage

136

Abstract

The objective of this paper is to analyze the safe operating area limitation caused by dynamic current localization at the gate turn-off transient of thyristor-like bipolar devices with imperfectly coupled elementary cells. The impact of series gate resistance on switching characteristics is studied by numerical simulation for the typical case of integrated thyristor with external MOS-control. The inequality of gate resistances for different cells is found to cause dangerous current localization and subsequent failure at the turn-off operation. Quantitative thresholds for the onset of current localization are determined and compared for different possible turn-off modes of the device under study.

Keywords

bipolar transistor switches; power semiconductor switches; thyristor circuits; MOS control; controlled cells; dynamic current localization; gate turn off transient; imperfect interconnection; integrated thyristor; power bipolar switch; safe operating area limitation; thyristor like bipolar device; Anodes; Cathodes; Junctions; Logic gates; Resistance; Switches; Thyristors; Power semiconductor devices; cascode turn-off; gate turn-off thyristor; safe operating area;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006914

Filename

6006914