• DocumentCode
    3111595
  • Title

    Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers

  • Author

    Kulubaeva, Elza G. ; Naumova, Olga V. ; Ilnitsky, Michael A. ; Popov, Vladimir P.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2011
  • fDate
    June 30 2011-July 4 2011
  • Firstpage
    140
  • Lastpage
    142
  • Abstract
    The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after γ-irradiation at dose 1 Mrad was found to be 1.3·1012 cm-2 and 2.1·1012 cm-2 for Dele-Cut and Unibond wafers, respectively.
  • Keywords
    MOSFET; gamma-rays; silicon-on-insulator; γ-irradiation; DeleCut wafers; SOI MOSFET; back-gate n-channel SOI MOSFET; gamma radiation response; silicon on insulator technology; threshold-voltage shifts; unibond wafers; Logic gates; MOSFETs; Physics; Radiation effects; Silicon; Silicon on insulator technology; Threshold voltage; Dele-Cut; SOI MOSFET; Unibond; buried oxide; charge accumulation; gamma irradiation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on
  • Conference_Location
    Erlagol, Altai
  • Print_ISBN
    978-1-61284-793-1
  • Type

    conf

  • DOI
    10.1109/EDM.2011.6006916
  • Filename
    6006916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3111595