Title :
Room temperature picosecond mode-locked pulse generation from a 1.55µm VECSEL with an InGaAsN/GaAsN fast saturable absorber mirror
Author :
Khadour, A. ; Bouchoule, S. ; Decobert, J. ; Harmand, J.C. ; Oudar, J.L.
Author_Institution :
CORIA, Rouen, France
fDate :
May 31 2010-June 4 2010
Abstract :
A 1.55μm VECSEL with a metal-GaAs/AlAs hybrid metamorphic mirror optimized for high power room temperature operation has been assembled with a fast saturable absorber mirror (SESAM) in a four-mirror cavity to generate mode-locked pulses at a frequency of 2 GHz. Stable pulses are obtained at room temperature avoiding the need for water cooling, with a pulsewidth <; 2 ps and an average optical power at the output coupling mirror of 10 mW. The RF linewidth of the free running laser has been measured to be less than 1000 Hz.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser mirrors; laser mode locking; optical pulse generation; optical saturable absorption; surface emitting lasers; InGaAsN-GaAsN; RF linewidth; SESAM; VECSEL; four mirror cavity; hybrid metamorphic mirror; picosecond mode locked pulse generation; power 10 mW; semiconductor saturable absorber mirror; temperature 293 K to 298 K; wavelength 1.55 mum; Assembly; Cooling; Frequency; Hybrid power systems; Mirrors; Optical pulse generation; Optical pulses; Power generation; Pulse generation; Temperature; Bragg Mirror; Passive mode-locking; Saturable absorber; Thermal Optimization; VECSEL;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5515998
