Reduction of offset in pressure sensors with polysilicon piezoresistors by the pulse current annealing method

Author

Polstyankin, Anton V. ; Gridchin, Victor A.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

152

Lastpage

154

Abstract

The effect of the pulse current annealing on conductivity of polysilicon piezoresistors was researched. This method allows to adjust the offset in pressure sensors. The polysilicon resistors with different doping concentration were researched. The first current pulses during annealing lead to the electrical forming of conductivity channels in the polysilicon film and the conductivity of resistor is increased. The further change of resistance depends on the relation between the current amplitude in pulse and the threshold current. If the current amplitude exceeds the threshold value, the resistance of polysilicon piezoresistors is reduced. Otherwise, the resistance is increased.

Keywords

annealing; elemental semiconductors; piezoelectric devices; pressure sensors; resistors; silicon; Si; conductivity channels; current amplitude; doping concentration; offset reduction; polysilicon film; polysilicon piezoresistor conductivity; pressure sensors; pulse current annealing method; threshold current; Annealing; Current measurement; Films; Piezoresistive devices; Resistance; Resistors; Sensors; Pulse current annealing; polysilicon; pressure sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006920

Filename

6006920