Development of self-aligned T-gate pHEMT technology

Author

Fedosova, Maria A. ; Gavrilova, Anastasia M. ; Erofeev, Evgeny V. ; Arykov, Vadim S.

Author_Institution

Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia

fYear

2011

fDate

June 30 2011-July 4 2011

Firstpage

165

Lastpage

167

Abstract

Self-aligned 0.25 μm T-gate pHEMT technology was described in this paper. Basic requirements of the self-aligned technology for gate profile were presented. Metallization system and annealing parameters providing low resistance ohmic contacts were chosen. Current-voltage characteristics, capacity-voltage characteristics and current gain of routine and self-aligned pHEMT were compared. The self-aligned technology provides an increase in transconductance S and drive current I_ds of 10...15% comparing with routine process. Cutoff frequency increased by 15 GHz and reached F_t ~70 GHz.

Keywords

high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; ohmic contacts; semiconductor device metallisation; annealing parameters; capacity-voltage characteristics; current-voltage characteristics; gate profile; low resistance ohmic contacts; metallization system; self-aligned T-gate pHEMT technology; size 0.25 mum; Annealing; Control systems; Gallium arsenide; Logic gates; Metallization; Ohmic contacts; PHEMTs; Self-aligned gate; electron beam lithography; ohmic contacts; pHEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2011 International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-61284-793-1

Type

conf

DOI

10.1109/EDM.2011.6006924

Filename

6006924