Tunable BaxSr1-xTiO3 FBARs based on SiO2/W Bragg reflectors

Author

Vorobiev, Alexey ; Gevorgian, S.

Author_Institution

Chalmers Univ., Gothenburg, Sweden

fYear

2010

fDate

23-28 May 2010

Firstpage

1

Lastpage

1

Abstract

Experimental performance of tunable Film Bulk Acoustic Wave Resonators (FBAR) using paraelectric phase BaxSr1-xTiO3 (BSTO) thin films is reported. It is shown that the SiO2/W based Bragg reflectors deposited on high resistivity substrates withstand relatively high deposition temperatures (600C) of the ferroelectric films without defects and delamination. Tunable FBARs with Qf products more than 1000 are demonstrated experimentally. Potentials of increasing the Q-factor and tunability are considered.

Keywords

Q-factor; acoustic resonators; barium compounds; bulk acoustic wave devices; ferroelectric thin films; strontium compounds; BaSrTiO; Bragg reflectors; FBAR; Q-factor; SiO₂-W; deposition temperatures; ferroelectric films; film bulk acoustic wave resonators; high-resistivity substrates; paraelectric phase thin films; temperature 600 degC; Acoustic waves; Conductivity; Delamination; Ferroelectric films; Film bulk acoustic resonators; Optical films; Q factor; Substrates; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5516013

Filename

5516013