RTD oscillators at 430–460 GHz with high output power (~200 µW) using integrated offset slot antennas

Author

Suzuki, S. ; Hinata, K. ; Shiraishi, M. ; Asada, M. ; Sugiyama, H. ; Yokoyama, H.

Author_Institution

Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

We demonstrated the operation of GaInAs/AlAs resonant tunneling diode (RTD) oscillators with high output power (100-200 μW) at frequencies of 430-460 GHz using an offset-fed slot antenna, in which the RTD was placed 45 μm from the center of a 100-μm-long antenna. The highest output power obtained in this study was 200 μW at 443 GHz for a single RTD with a peak current density of 18 mA/μm². The output powers of 50-130 μW at frequencies of 460-490 GHz were also obtained in the oscillators with different structure. Higher output is expected by optimizing the position and mesa area of the RTD and the antenna length.

Keywords

resonant tunnelling diodes; slot antennas; submillimetre wave oscillators; terahertz waves; GaInAs-AlAs; RTD oscillator; distance 45 mum; frequency 430 GHz to 460 GHz; integrated offset slot antenna; peak current density; power 100 muW to 200 muW; resonant tunneling diode; size 100 mum; Oscillators; Power generation; Slot antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516019

Filename

5516019