Title :
RTD oscillators at 430–460 GHz with high output power (~200 µW) using integrated offset slot antennas
Author :
Suzuki, S. ; Hinata, K. ; Shiraishi, M. ; Asada, M. ; Sugiyama, H. ; Yokoyama, H.
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
We demonstrated the operation of GaInAs/AlAs resonant tunneling diode (RTD) oscillators with high output power (100-200 μW) at frequencies of 430-460 GHz using an offset-fed slot antenna, in which the RTD was placed 45 μm from the center of a 100-μm-long antenna. The highest output power obtained in this study was 200 μW at 443 GHz for a single RTD with a peak current density of 18 mA/μm2. The output powers of 50-130 μW at frequencies of 460-490 GHz were also obtained in the oscillators with different structure. Higher output is expected by optimizing the position and mesa area of the RTD and the antenna length.
Keywords :
resonant tunnelling diodes; slot antennas; submillimetre wave oscillators; terahertz waves; GaInAs-AlAs; RTD oscillator; distance 45 mum; frequency 430 GHz to 460 GHz; integrated offset slot antenna; peak current density; power 100 muW to 200 muW; resonant tunneling diode; size 100 mum; Oscillators; Power generation; Slot antennas;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516019
