Title :
Ammonothermal technology for bulk gallium nitride crystals
Author :
Ehrentraut, D. ; Fukuda, T.
Author_Institution :
World Premier Int. Res. Center, Tohoku Univ., Sendai, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.
Keywords :
III-V semiconductors; crystal growth from vapour; gallium compounds; semiconductor growth; wide band gap semiconductors; GaN; acidic ammonothermal growth; ammonothermal method; bulk gallium nitride crystals; hydride vapor phase growth; Chemical technology; Crystalline materials; Crystals; Gallium nitride; III-V semiconductor materials; Mineralization; Solvents; Substrates; Temperature; Zinc oxide;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516027
