Title :
A low time complexity defect-tolerance algorithm for nanoelectronic crossbar
Author :
Yuan, Bo ; Li, Bin
Author_Institution :
Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
Emerging nanoelectronic technologies are expected to extend the conventional integrated circuits beyond CMOS. However, the bottom-up self-assembly fabrication process of nanoelectronic devices results in higher defect density. Thus, crafted defect-tolerance techniques are urgently needed. In this paper, we present a low time complexity algorithm for application-independent defect-tolerance of nanoelectronic crossbars. The algorithm improves the performance through mixing the key ideas from two state-of-the-art algorithms. The algorithm offers similar (above 90%) defect-free subcrossbar sizes compared to the current best algorithm as the results show over a set of samples with various crossbar sizes and defect densities, but the time complexity is reduced from O(n3) down to O(n2). Thus, our algorithm is more suitable for defect-tolerance of reconfigurable nanoelectronic crossbar due to the per-chip basis.
Keywords :
CMOS integrated circuits; nanoelectronics; self-assembly; CMOS integrated circuits; defect density; defect-tolerance; low time complexity algorithm; nanoelectronic devices; nanoelectronic technology; reconfigurable nanoelectronic crossbar; self-assembly fabrication; Algorithm design and analysis; Bipartite graph; Complexity theory; Nanoscale devices; Nanowires; Partitioning algorithms; Self-assembly;
Conference_Titel :
Information Science and Technology (ICIST), 2011 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-9440-8
DOI :
10.1109/ICIST.2011.5765228