Title :
Diversity mapping scheme for defect and fault tolerance in nanoelectronic crossbar
Author :
Yuan, Bo ; Li, Bin
Author_Institution :
Dept. of Electron. Sci. & Technol., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
The bottom-up self-assembly fabrication process of nanoelectronic results in higher defect density. Furthermore, transient and permanent faults could also occur during operation due to the sensitivity. Thus, defect and fault tolerance techniques are urgently needed. In this paper, we propose a concept of diversity mapping and three corresponding algorithms for defect-tolerance logic mapping in nanoelectronic crossbar. As the results show, our algorithms can achieve several or ten times higher logic mapping success rates compared to the best recently published technique over a set of samples with various problem sizes, especially superior in large scale problems. What´s more, our algorithms can offer a set of different mapping schemes as by-products which we can utilize for accelerating online self-repair from the faults.
Keywords :
CMOS integrated circuits; fault tolerance; nanoelectronics; self-assembly; bottom-up self-assembly fabrication; defect density; defect tolerance; defect-tolerance logic mapping; diversity mapping; fault tolerance; nanoelectronic crossbar; online self-repair; permanent faults; transient faults; Bipartite graph; Greedy algorithms; Logic functions; Maintenance engineering; Nanoscale devices; Nanowires; Wires;
Conference_Titel :
Information Science and Technology (ICIST), 2011 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-9440-8
DOI :
10.1109/ICIST.2011.5765229