Investigation of the origin of InAs dot formation at the growth interrupted AlGaInAs hetero-interface grown by MOVPE

Author

Nagira, Takashi ; Ono, Kenichi ; Takemi, Masayoshi

Author_Institution

High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

In the growth of AlGaInAs/InP material system by metal organic vapor phase epitaxy (MOVPE), there are many hillocks on the wafer in some growth conditions. We analyzed the hillocks by TEM and EDX and found that the origin of the hillocks is InAs dots on growth interrupted interface. In addition, we investigated the growth condition dependence of hillock distribution in details, and revealed the origin and the mechanism of the formation of InAs dots.

Keywords

III-V semiconductors; MOCVD; X-ray chemical analysis; aluminium compounds; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; transmission electron microscopy; vapour phase epitaxial growth; AlGaInAs-InP; EDX; InAs; MOVPE; TEM; dot formation; growth conditions; growth interrupted heterointerface; hillock distribution; metal organic vapor phase epitaxy; wafer; Buffer layers; Conducting materials; Epitaxial growth; Epitaxial layers; Indium phosphide; Morphology; Optical devices; Optical materials; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516035

Filename

5516035