Title :
Soft error improvement in SRAMs by ion implanted shallow well structure
Author :
Arita, Y. ; Takai, M. ; Ogawa, I. ; Kishimoto, T. ; Sonoda, K. ; Tsutsumi, K.
Author_Institution :
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
Abstract :
Sensibility to alpha particle and neutron-induced soft errors in SRAM was reduced by an ion implanted shallow well structure. The amount of charges collected to a storage node and the sensibility to soft error were reduced by 30-50% and 70-80%, respectively, by reducing a well depth from 2.0 μm to 13 μm
Keywords :
SRAM chips; alpha-particle effects; ion implantation; neutron effects; semiconductor doping; 2.0 to 1.3 mum; SRAMs; ion implanted shallow well structure; neutron-induced soft errors; soft error improvement; storage node; Alpha particles; CMOS technology; Impurities; Ion implantation; Materials science and technology; Neutrons; Protection; Radioactive materials; Random access memory; Ultra large scale integration;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924095
