Title :
Ion-implanted silicon detectors of nuclear radiation
Author :
Yrchuk, S.Yu. ; Kol´tsov, G.I. ; Kuts, V.A.
Author_Institution :
Inst. of Steel & Alloys, Moscow, Russia
Abstract :
The silicon detectors of nuclear radiation are produced by ion implantation. The comparison of the characteristics of detectors conducted by various ways and with use of different modes was carried out. It was shown that with use of optimum modes of manufacturing the detectors have good energy resolution. It was shown also, that the produced structures can work as photocells in pairs with scintillators
Keywords :
elemental semiconductors; ion implantation; photodetectors; silicon; silicon radiation detectors; solid scintillation detectors; Si; energy resolution; ion implantation; ion-implanted silicon detectors; manufacturing; nuclear radiation; optimum modes; photocells; scintillators; Gettering; Ion implantation; Manufacturing processes; Oxidation; P-n junctions; Production; Radiation detectors; Semiconductor device manufacture; Silicon radiation detectors; Strips;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924099
