DocumentCode :
3112575
Title :
Improved single-diode modeling approach for photovoltaic modules using data sheet
Author :
Yetayew, T.T. ; Jyothsna, T.R.
Author_Institution :
Dept. of Electr. Eng., Andhra Univ., Visakhapatnam, India
fYear :
2013
fDate :
13-15 Dec. 2013
Firstpage :
1
Lastpage :
6
Abstract :
This paper proposed an improved single diode photovoltaic module model over the Rp-model (single-diode, five parameter model) based on datasheet values. Rp-model is widely in use being a compromise among other diode models in simplicity and accuracy. However, the model has major drawback at low irradiance level that is deviation from experimental data in the vicinity of open circuit voltage. And this drawback was improved using two diode model at the expense of increased complexity, parameters, and computation time. The main contribution of this paper is an improved single diode model partly using empirically determined points. Like the Rp-model it has simplicity and improved accuracy, unlike the Rp-model showed a significant reduction in absolute error from the experimental data especially at low irradiance level in the vicinity of open circuit voltage. The performance of model was verified against the experimental data for three common PV module technologies: Mono-crystalline silicon, multi-crystalline silicon, and Thin-film (CIS). The performance of three module types using Rp-model and proposed model was compared against the experimental data. The I-V characteristic and absolute relative error plots of module current revealed the significant improvement of the proposed model over the Rp model.
Keywords :
elemental semiconductors; semiconductor diodes; silicon; solar cells; CIS; PV module technologies; Rp-model; monocrystalline silicon; multicrystalline silicon; open circuit voltage; photovoltaic modules; single-diode modeling approach; thin-film; Accuracy; Computational modeling; Data models; Equations; Integrated circuit modeling; Mathematical model; Semiconductor diodes; I-V characteristic curve; PV modules; Rp-model; absolute error; simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
India Conference (INDICON), 2013 Annual IEEE
Conference_Location :
Mumbai
Print_ISBN :
978-1-4799-2274-1
Type :
conf
DOI :
10.1109/INDCON.2013.6726092
Filename :
6726092
Link To Document :
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