Distribution of ion implanted dopants in gallium nitride

Author

Wenzel, A. ; Karl, Holger ; Chang Liu

Author_Institution

Inst. fur Phys., Augsburg Univ.

fYear

2000

fDate

2000

Firstpage

99

Lastpage

102

Abstract

Wurtzitic gallium nitride (GaN) films were implanted with mainly Mg but also with Si, C, and O ions under different conditions (energy, dose, implantation angle, ion-charge state). The resulting depth distributions were analyzed by secondary ion mass spectroscopy (SIMS). The implantation depth profiles and the damage profiles, investigated by Rutherford backscattering-spectroscopy/channeling, are in good agreement with Monte-Carlo simulations. Mg-implantation in the [0001]-channeling direction of GaN resulted in a doubling of the mean projected range of the ions. In addition, the SIMS-detection limit for the different elements was determined

Keywords

III-V semiconductors; Monte Carlo methods; Rutherford backscattering; carbon; channelling; doping profiles; energy loss of particles; gallium compounds; ion implantation; magnesium; oxygen; secondary ion mass spectra; semiconductor thin films; silicon; wide band gap semiconductors; C; GaN films; GaN:Mg,Si,C,O; Mg; Monte-Carlo simulation; O; Rutherford backscattering-spectroscopy/channeling; SIMS; SIMS-detection limit; Si; [0001]-channeling direction; damage profiles; depth distributions; dose; energy; gallium nitride; implantation angle; implantation depth profiles; ion implanted dopants; ion-charge state; mean projected range; secondary ion mass spectroscopy; wurtzite gallium nitride; Backscatter; Doping; Gallium nitride; III-V semiconductor materials; Ion implantation; Mass spectroscopy; Molecular beam epitaxial growth; Pollution measurement; Semiconductor films; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924100

Filename

924100