DocumentCode :
3112601
Title :
Study of electrical properties of poly-3-alkylthiophen (P3AT) derivatives P3HT, P3BT and P3DDT based field effect transistors
Author :
Tiwari, Sunita ; Tiwari, Sunita ; Prakash, R. ; Balasubramanian, S.K.
Author_Institution :
Dept. of Electron. Eng., IIT (BHU), Varanasi, India
fYear :
2013
fDate :
13-15 Dec. 2013
Firstpage :
1
Lastpage :
4
Abstract :
Top contact organic thin-film field effect transistors based on regioregular poly(3-butylthiophene-2,5-diyl) (P3BT), poly(3-dodecylthiophene-2,5-diyl) (P3DDT) and poly(3-hexylthiophene-2,5-diyl) (P3HT) of similar concentration were fabricated by spin coating technique. The current-voltage (I-V) characteristics of these three different polymer based organic field-effect transistors (OFETs) were studied. The device performance parameters for each kind of OFET were estimated with the help of measured electrical characteristics and performance were compared to optimize the best polymer for FETs amongst these three polymers.
Keywords :
carrier mobility; conducting polymers; field effect transistors; organic semiconductors; spin coating; OFET; electrical properties; organic thin film field effect transistors; poly-3-alkylthiophen derivatives; polymer based organic field effect transistors; spin coating technique; Coatings; Current measurement; Films; OFETs; Performance evaluation; Polymers; OFETs; conducting polymers; poly-3-alkylthiophen (P3AT); spin coating;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
India Conference (INDICON), 2013 Annual IEEE
Conference_Location :
Mumbai
Print_ISBN :
978-1-4799-2274-1
Type :
conf
DOI :
10.1109/INDCON.2013.6726094
Filename :
6726094
Link To Document :
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