DocumentCode :
3112652
Title :
How to extend a thermal-RC-network model (derived from experimental data) to respond to an arbitrarily fast input
Author :
Stout, Roger Paul ; Billings, David T.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fYear :
1998
fDate :
10-12 Mar 1998
Firstpage :
8
Lastpage :
15
Abstract :
For a growing number of customers, the transient thermal response of packaged semiconductor devices is a critical issue. It is not enough to predict “time averaged” junction temperatures based on average power dissipation, because the actual duty cycle and associated transient response of a device may lead to peak junction temperatures vastly higher than such steady-state predictions. Experimental techniques exist for accurately measuring the thermal transient response of a physical device in the 100 μs range, and thermal RC-networks can readily be generated to match these measurements. Such networks can then be exercised with modeling tools such as SPICE to obtain predictions for time-varying power inputs in this time range. Faster experimental measurements are often complicated by uncontrollable electronic interactions, yet in real-life applications, power cycling of a device may necessitate accurate predictions of the system thermal response in the 1 μs time frame (or faster). It is shown that a thermal RC-network model based on experimental data can be readily modified by following straightforward rules, such that an arbitrarily fast response can be accommodated. This concept can also be used to optimize the meshing of 3D finite element models such that accurate transient response is obtained in the desired time domain, yet model size is minimized
Keywords :
SPICE; integrated circuit modelling; integrated circuit packaging; mesh generation; semiconductor device models; semiconductor device packaging; thermal analysis; transient analysis; transient response; 3D FEM meshing optimization; 3D finite element models; SPICE; arbitrarily fast input response; average power dissipation; device duty cycle; device transient response; model size minimization; modeling tools; packaged semiconductor devices; peak junction temperatures; power cycling; system thermal response; thermal RC-networks; thermal transient response; thermal-RC-network model; time averaged junction temperatures; time-varying power inputs; transient thermal response; Electronic packaging thermal management; Power dissipation; Power system modeling; Predictive models; SPICE; Semiconductor device packaging; Semiconductor devices; Steady-state; Temperature; Transient response;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium, 1998. SEMI-THERM Proceedings 1998., Fourteenth Annual IEEE
Conference_Location :
San Diego, CA
ISSN :
1065-2221
Print_ISBN :
0-7803-4486-3
Type :
conf
DOI :
10.1109/STHERM.1998.660381
Filename :
660381
Link To Document :
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