• DocumentCode
    3112786
  • Title

    Comparative analysis of parameters of deep levels in the ion implanted layers and fast electron-irradiated structures

  • Author

    Yurchuk, S.Y. ; Kol´tsov, G.I. ; Didenko, S.I.

  • Author_Institution
    Steel & Alloys Inst., Moscow, Russia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    Deep-level transient-spectroscopy (DLTS) techniques have been used to investigate of parameters the deep levels in ion implanted and electron irradiated semiconductor compounds AIIIBV. The comparative analysis of parameters of deep levels in the ion implanted layers and electron-irradiated structures are presented in this paper
  • Keywords
    III-V semiconductors; deep level transient spectroscopy; deep levels; defect states; electron beam effects; impurity states; ion implantation; AIIIBV; DLTS; deep levels; deep-level transient-spectroscopy; electron-irradiated structures; fast electron-irradiated structures; ion implanted layers; semiconductor compounds; Annealing; Electrons; Energy capture; Gallium arsenide; Indium phosphide; Ion implantation; Ionization; P-n junctions; Schottky barriers; Steel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology, 2000. Conference on
  • Conference_Location
    Alpbach
  • Print_ISBN
    0-7803-6462-7
  • Type

    conf

  • DOI
    10.1109/.2000.924107
  • Filename
    924107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3112786