Title :
Ion implantation induced damage in silicon carbide studied by non-Rutherford elastic backscattering
Author :
Szilágyi, E. ; Kótai, E. ; Khánh, N.Q. ; Zolnai, Z. ; Battistig, G. ; Lohner, T. ; Gyulai, J.
Author_Institution :
Res. Inst. of Particle & Nucl. Phys., Budapest, Hungary
Abstract :
Non-Rutherford elastic scattering is a suitable method to obtain concentrations of low atomic number constituents which are difficult to determine when the scattering cross section is Rutherford type. An enhancement factor of over a hundred for the cross section of 12 C can be reached using the 12C(α,α)12 C nuclear resonance at 4260 keV. This resonance was utilized to investigate the ion bombardment induced disorder in the carbon sublattice of 4H-SiC. The disorder was created by implantation of 200 keV and 350 keV Al+ ions at room temperature
Keywords :
aluminium; ion beam effects; ion implantation; nuclear chemical analysis; particle backscattering; silicon compounds; wide band gap semiconductors; 20 C; 200 keV; 350 keV; 4H-SiC; 12C; 12C(α,α)12C nuclear resonance; Al+ ions; SiC:Al; atomic number constituents; carbon sublattice; cross section; elastic scattering; enhancement factor; implantation; ion bombardment induced disorder; ion implantation induced damage; nonRutherford elastic backscattering; room temperature; scattering cross section; silicon carbide; Backscatter; Crystallization; Ion beams; Ion implantation; Particle scattering; Resonance; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924108
