Title :
Effect of defects produced by MeV H and He ion implantation on characteristics of power silicon P-i-N diodes
Author :
Hazdra, Pavel ; Brand, K. ; Vobecky, Jan
Author_Institution :
Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
Abstract :
The influence of defects produced by high-energy H+ and He2+ implantation on characteristics of power P-i-N diodes was investigated and compared. The analysis was performed for three qualitatively different locations of defect maximum in the dose range covering practical applications. Results show that both projectiles provide identical dynamic behavior of implanted diodes while their influence on blocking capability varies with dose and damage peak location. This effect is explained by the different introduction rate of generation centers and shallow thermal donors when hydrogen is replaced by helium
Keywords :
deep level transient spectroscopy; helium; hydrogen; ion beam effects; ion implantation; leakage currents; p-i-n diodes; power semiconductor diodes; semiconductor device breakdown; silicon; 1.8 to 12.1 MeV; H ion implantation; He ion implantation; Si:H; Si:He; blocking capability; damage peak location; defect effects; generation centers; high-energy ion implantation; ion dose; power silicon P-i-N diodes; shallow thermal donors; Anodes; Cathodes; Helium; Hydrogen; Ion implantation; Microelectronics; P-i-n diodes; Projectiles; Silicon; Thyristors;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924109
