Dopant redistribution in silicon enhanced by hundred MeV heavy ion irradiation

Author

Dinu, N. ; Antonova, I.V. ; Gyulai, J. ; Skuratov, V.A. ; Oprea, A.I.

Author_Institution

JINR, Dubna, Russia

fYear

2000

fDate

2000

Firstpage

147

Lastpage

150

Abstract

The effects of low dose 710 MeV Bi and 305 MeV Kr ion irradiation on boron redistribution and electric activation processes in silicon during furnace annealing have been studied. It was found that hundred MeV ion irradiation enhances the shift of boron depth distribution towards the depth of the material and significantly decreases the electrical activation of dopants. The difference in dynamics of boron activation between reference and high energy heavy ion irradiated silicon samples is attributed to formation of stable defect clusters in the ion track range

Keywords

annealing; boron; carrier density; doping profiles; elemental semiconductors; ion beam effects; semiconductor doping; silicon; 305 MeV; 710 MeV; Bi; Kr; Si:B; boron depth distribution; dopant electrical activation; dopant redistribution; furnace annealing; high energy heavy ion irradiated silicon; low dose heavy ion irradiation; silicon; stable defect clusters; Annealing; Bismuth; Boron alloys; Energy loss; Ion beams; Materials science and technology; Neutrons; Phase frequency detector; Physics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924111

Filename

924111