MOVPE regrowth steps for high power Quantum Cascade Lasers

Author

Parillaud, O. ; Carras, M. ; Maisons, G. ; Simozrag, B. ; Garcia, M. ; Marcadet, X. ; Alexandre, F. ; Patard, O. ; Pommereau, F. ; Drisse, O.

Author_Institution

III-V Lab., Alcatel Thales III-V Lab., Palaiseau, France

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

We report on the realization of both Distributed Feedback (DFB) and Fabry-Pérot (FP) Quantum Cascade Lasers (QCLs) at Alcatel Thales III-V Lab, involving MOVPE regrowth steps for the realization of the upper cladding and buried ridge structures. We present our results on both device types. Optimization of the planarization process as well as reduction of the thermal resistance achieved using semi-insulating InP:Fe for regrowth is shown and performance perspectives using these building blocks are addressed.

Keywords

Fabry-Perot resonators; III-V semiconductors; MOCVD; distributed feedback lasers; indium compounds; iron; laser cavity resonators; optical fabrication; quantum cascade lasers; ridge waveguides; vapour phase epitaxial growth; waveguide lasers; Fabry-Perot quantum cascade lasers; InP:Fe; MOVPE; distributed feedback laser; Epitaxial growth; Epitaxial layers; Gratings; III-V semiconductor materials; Optical device fabrication; Plugs; Power generation; Quantum cascade lasers; Surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516056

Filename

5516056