Title :
MOVPE regrowth steps for high power Quantum Cascade Lasers
Author :
Parillaud, O. ; Carras, M. ; Maisons, G. ; Simozrag, B. ; Garcia, M. ; Marcadet, X. ; Alexandre, F. ; Patard, O. ; Pommereau, F. ; Drisse, O.
Author_Institution :
III-V Lab., Alcatel Thales III-V Lab., Palaiseau, France
fDate :
May 31 2010-June 4 2010
Abstract :
We report on the realization of both Distributed Feedback (DFB) and Fabry-Pérot (FP) Quantum Cascade Lasers (QCLs) at Alcatel Thales III-V Lab, involving MOVPE regrowth steps for the realization of the upper cladding and buried ridge structures. We present our results on both device types. Optimization of the planarization process as well as reduction of the thermal resistance achieved using semi-insulating InP:Fe for regrowth is shown and performance perspectives using these building blocks are addressed.
Keywords :
Fabry-Perot resonators; III-V semiconductors; MOCVD; distributed feedback lasers; indium compounds; iron; laser cavity resonators; optical fabrication; quantum cascade lasers; ridge waveguides; vapour phase epitaxial growth; waveguide lasers; Fabry-Perot quantum cascade lasers; InP:Fe; MOVPE; distributed feedback laser; Epitaxial growth; Epitaxial layers; Gratings; III-V semiconductor materials; Optical device fabrication; Plugs; Power generation; Quantum cascade lasers; Surface emitting lasers; Wavelength measurement;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516056
