Influence of RTP flash anneal ramp rates on lithography overlay performance on 300 mm integrated wafers

Author

Storbeck, Olaf ; Ganz, Dietmar ; Stadmuller, M. ; Frigge, Steffen ; Lerch, Wilfried ; Graef, Dieter ; Obermeier, Günther

Author_Institution

Semicond.300 GmbH, Dresden, Germany

fYear

2000

fDate

2000

Firstpage

159

Lastpage

162

Abstract

The influence of RTP with high ramp rates on lithography overlay distortion was investigated in this work using sub-quarter-micron technology on 300 mm wafers. The concentrations of interstitial oxygen was varied, as well as ramp rates and lamp correction tables used to optimise the across-wafer temperature uniformity. The influence of these parameters on the rapid thermal anneal (RTA) performance was studied. Wafer geometry and lithography overlay measurements where used to determine the impact of the material and RTA process parameters to lithography pattern shifts

Keywords

integrated circuit technology; interstitials; oxygen; rapid thermal annealing; ultraviolet lithography; 300 mm; RTP flash anneal ramp rates; Si:O,BF₂; across-wafer temperature uniformity optimisation; integrated wafers; interstitial oxygen concentrations; lamp correction; lithography overlay distortion; lithography overlay performance; lithography pattern shifts; rapid thermal annealing; wafer geometry; Electrical resistance measurement; Geometry; Lamps; Lithography; Random access memory; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924114

Filename

924114