Title :
Influence of RTP flash anneal ramp rates on lithography overlay performance on 300 mm integrated wafers
Author :
Storbeck, Olaf ; Ganz, Dietmar ; Stadmuller, M. ; Frigge, Steffen ; Lerch, Wilfried ; Graef, Dieter ; Obermeier, Günther
Author_Institution :
Semicond.300 GmbH, Dresden, Germany
Abstract :
The influence of RTP with high ramp rates on lithography overlay distortion was investigated in this work using sub-quarter-micron technology on 300 mm wafers. The concentrations of interstitial oxygen was varied, as well as ramp rates and lamp correction tables used to optimise the across-wafer temperature uniformity. The influence of these parameters on the rapid thermal anneal (RTA) performance was studied. Wafer geometry and lithography overlay measurements where used to determine the impact of the material and RTA process parameters to lithography pattern shifts
Keywords :
integrated circuit technology; interstitials; oxygen; rapid thermal annealing; ultraviolet lithography; 300 mm; RTP flash anneal ramp rates; Si:O,BF2; across-wafer temperature uniformity optimisation; integrated wafers; interstitial oxygen concentrations; lamp correction; lithography overlay distortion; lithography overlay performance; lithography pattern shifts; rapid thermal annealing; wafer geometry; Electrical resistance measurement; Geometry; Lamps; Lithography; Random access memory; Rapid thermal annealing; Rapid thermal processing; Silicon; Temperature; Ultra large scale integration;
Conference_Titel :
Ion Implantation Technology, 2000. Conference on
Conference_Location :
Alpbach
Print_ISBN :
0-7803-6462-7
DOI :
10.1109/.2000.924114
