DocumentCode
3113170
Title
Switching characteristics in variable refractive-index waveguide array by carrier injection
Author
Sugio, Takayuki ; Aoyagi, Takanori ; Tanimura, Takashi ; Murakami, Yosuke ; Shimomura, Kazuhiko
Author_Institution
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
fYear
2010
fDate
May 31 2010-June 4 2010
Firstpage
1
Lastpage
4
Abstract
We have demonstrated a carrier-injection-type wavelength switch composed of the straight waveguide array using GaInAs/InP MQW with linearly varying refractive index distribution fabricated by selective MOVPE.
Keywords
III-V semiconductors; MOCVD; demultiplexing equipment; gallium arsenide; indium compounds; optical arrays; optical fabrication; optical switches; optical waveguides; quantum well devices; refractive index; vapour phase epitaxial growth; GaInAs-InP; GalnAs MQW; InP MQW; MOVPE; carrier-injection-type wavelength switch; metal-organic vapor phase epitaxy growth; refractive index distribution; refractive-index waveguide array; switching characteristics; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical arrays; Optical refraction; Phased arrays; Quantum well devices; Refractive index; Switches; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location
Kagawa
ISSN
1092-8669
Print_ISBN
978-1-4244-5919-3
Type
conf
DOI
10.1109/ICIPRM.2010.5516068
Filename
5516068
Link To Document