DocumentCode
3113214
Title
The ion dechanneling mechanism at grazing scattering on the surface atomic steps
Author
Dzhurakhalov, A.A. ; Kalandarov, B.S. ; Kutliev, U.O. ; Umarov, F.F.
Author_Institution
Urgench State Univ., Uzbekistan
fYear
2000
fDate
2000
Firstpage
217
Lastpage
219
Abstract
The dechanneling of ions from the monoatomic steps on the GaP(100) surface as well as the trajectories of these particles have been carefully studied. The energy and angular distributions of the dechanneling ions have been calculated. It was shown that the dechanneling ions form the characteristic peaks in the angular and energy distributions of scattered ions
Keywords
III-V semiconductors; channelling; gallium compounds; ion-surface impact; surface topography; GaP; GaP(100) surface; angular distributions; energy distributions; grazing scattering; ion dechanneling mechanism; surface atomic steps; Atomic layer deposition; Atomic measurements; Crystallography; Electrons; Energy loss; Kinetic energy; Nuclear electronics; Particle scattering; Solids; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology, 2000. Conference on
Conference_Location
Alpbach
Print_ISBN
0-7803-6462-7
Type
conf
DOI
10.1109/.2000.924128
Filename
924128
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