Computer simulation of ion implantation with visual observation of the implantation profiles

Author

Djurabekova, F.G. ; Pugacheva, T.S. ; Umarov, F.F. ; Yugay, S.V.

Author_Institution

Inst. of Appl. Phys., Nat. Univ. of Uzbekistan, Tashkent, Uzbekistan

fYear

2000

fDate

2000

Firstpage

228

Lastpage

231

Abstract

In the present work CASWIN-D-code is described, which allows visually observe of the surface composition change. The code is more convenient for investigation of ion implantation processes due to the possibility for obtaining the visual results for their immediate analysis. The code is very simple in use and universal for wide range of multicomponent materials. We have performed the calculation of B₄C and GaAs implantation with He⁺, Ar⁺ and Ba ⁺ ions by means of CASWIN-D-code. The correctness of program and adequacy of used calculation model is confirmed by comparison with experiment that shows the good agreement

Keywords

III-V semiconductors; boron compounds; doping profiles; gallium arsenide; ion implantation; physics computing; semiconductor doping; surface composition; Ar⁺ ions; B₄C; B₄C implantation; B₄C:He; Ba⁺ ions; CASWIN-D-code; GaAs; GaAs implantation; GaAs:Ar; GaAs:Ba; He⁺ ions; calculation model; computer simulation; implantation profiles; ion implantation; multicomponent materials; surface composition change; Atomic layer deposition; Capacitive sensors; Computer simulation; Energy loss; Gallium arsenide; Ion implantation; Physics; Slabs; Solid modeling; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Conference_Location

Alpbach

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924131

Filename

924131